Semiconductor device with increased channel area and decreased leakage current
AssigneeHynix Semiconductor Inc.
InventorsSung Woong Chung, Sang Don Lee
Life of this patent
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Abstract
The semiconductor device includes an active region, a recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the recess channel region. The gate structure is disposed over the recess channel region of the gate region.
Claims12
A semiconductor device comprising:
- a device isolation structure formed in a semiconductor substrate to define an active region;
- a recess channel region including vertical silicon-an-insulator (SOI) channel structures formed in the active region, wherein the vertical SOI channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region;
- and
- a gate structure disposed over the recess channel region of the gate region.
12-37. (canceled)
Dependencies are inferred from the claim text.