Nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsAkira Takashima, Masao Shingu, Naoki Yasuda, Koichi Muraoka
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Abstract
A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film.
Claims17
A nonvolatile semiconductor memory device comprising:
- a source region and a drain region provided apart from each other in a semiconductor substrate;
- a first insulating film provided on a channel region between the source region and the drain region;
- a charge storage layer provided on the first insulating film;
- a second insulating film provided on the charge storage layer and including a stacked structure of a first lanthanum aluminum silicate film and a first dielectric film made of silicon oxide or silicon oxynitride;
- and
- a control gate electrode provided on the second insulating film.
A nonvolatile semiconductor memory device comprising:
- a source region and a drain region provided apart from each other in a semiconductor substrate;
- a first insulating film provided on a channel region between the source region and the drain region;
- a charge storage layer provided on the first insulating film;
- a second insulating film provided on the charge storage layer and including a stacked structure of a first dielectric film made of silicon oxynitride or silicon nitride, a first silicon oxide film, a lanthanum aluminum silicate film, a second silicon oxide film and a second dielectric film made of silicon oxynitride or silicon nitride;
- and
- a control gate electrode provided on the second insulating film.
A nonvolatile semiconductor memory device comprising:
- a source region and a drain region provided apart from each other in a semiconductor substrate;
- a first insulating film provided on a channel region between the source region and the drain region and including a stacked structure of a first lanthanum aluminum silicate film and a first dielectric film made of silicon oxide or silicon oxynitride;
- a charge storage layer provided on the first insulating film;
- a second insulating film provided on the charge storage layer;
- and
- a control gate electrode provided on the second insulating film.
Dependencies are inferred from the claim text.