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US 2010/0072533 A1Published application
Asymmetric channel doping for improved memory operation for floating body cell (fbc) memory
AssigneeIntel Corporation
InventorsIbrahim Ban, Avci E. Uygar, David L. Kencke
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Abstract
An improved dynamic memory cell using a semiconductor fin or body is described. Asymmetrical doping is used in the channel region, with more dopant under the back gate to improve retention without significantly increasing read voltage.
Claims17
A semiconductor device comprising:
- a channel region having a first region comprising a conductivity type dopant adjacent to a first surface of the channel region, a second region of the conductivity type dopant adjacent to a second surface of the channel region, and a third region between the first and second regions, wherein the dopant level of the first region is different than the dopant level of the second region, and wherein the dopant level of the third region is lower than the dopant levels of both the first region and the second region;
- a first and second gate adjacent to the first and second surfaces, respectively, but insulated from the first and second surfaces;
- and
- a source and drain region formed in the body with the channel region disposed therebetween.
1 more element
A semiconductor memory device comprising:
- a silicon channel region disposed between a pair of source and drain regions;
- a first gate and a second gate insulated from the silicon channel region, each gate disposed on an opposite side of the silicon channel region between the source and drain regions;
- a first region of the silicon channel region proximate to the first gate, the first region doped with a conductivity type dopant to a first dopant level;
- a second region of the silicon channel region proximate to the second gate, the second region doped with the conductivity type dopant to a second level, the first level different than the second level;
- and
- a third region of the silicon channel region between the first and second regions, the third region having a dopant level lower than the dopant levels of the first region and the second region.
3 more elements
Dependencies are inferred from the claim text.