Semiconductor light emitting devices grown on composite substrates
AssigneeKoninklijke Philips Electronics N.V.
InventorsMelvin B. MCLAURIN, Michael R. KRAMES
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Abstract
A plurality of III-nitride semiconductor structures, each comprising a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.
Claims18
A method comprising:
- growing a plurality of III-nitride semiconductor structures on a substrate, wherein:
- each semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region;
- the substrate comprises a host, a plurality of islands of III-nitride material separated by trenches, and a bonding layer disposed between the host and the plurality of islands of III-nitride material;
- and
- the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms;
- and
- forming a conductive material that electrically connects two of the III-nitride semiconductor structures.
A device comprising:
- a plurality of III-nitride semiconductor structures connected to a mount, wherein:
- each semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region;
- adjacent semiconductor structures are separated by trenches;
- and
- the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms;
- and
- a conductive material disposed between two of the semiconductor structures, wherein the conductive material electrically connects two of the III-nitride semiconductor structures.
Dependencies are inferred from the claim text.