US 2010/0072467 A1Published application

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsShunpei YAMAZAKI, Kengo AKIMOTO, Shigeki KOMORI, Hideki UOCHI, Rihito WADA, Yoko CHIBA

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Abstract

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Claims27

Dependent claims

A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;
a second substrate having a first conductive layer;
and
a conductive particle between the first substrate and the second substrate,
wherein the pixel portion comprises:
a gate electrode over the first substrate;
a first insulating layer over the gate electrode;
a first oxide semiconductor layer over the first insulating layer;
a second insulating layer over a part of the first oxide semiconductor layer;
a second oxide semiconductor layer and a third oxide semiconductor layer over the first oxide semiconductor layer and the second insulating layer;
a second conductive layer over the first insulating layer and the second oxide semiconductor layer;
a third conductive layer over the first insulating layer and the third oxide semiconductor layer;
a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer;
and
a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole
wherein the common connection portion comprises:
a fourth insulating layer over the first substrate;
a fifth conductive layer over the fourth insulating layer;
a fifth insulating layer having a second contact hole formed over the fifth conductive layer;
and
a sixth conductive layer over the fifth insulating layer and electrically connected to the fifth conductive layer through the second contact hole,
wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,
wherein the second conductive layer, the third conductive layer, and the fifth conductive layer are formed of the same material,
wherein the fourth conductive layer and the sixth conductive layer are formed of the same material,
wherein the first insulating layer and the fourth insulating layer are formed of the same material, and
wherein the third insulating layer and the fifth insulating layer are formed of the same material.

23 more elements

A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;
a second substrate having a first conductive layer;
and
a conductive particle between the first substrate and the second substrate,
wherein the pixel portion comprises:
a gate electrode over the first substrate;
a first insulating layer over the gate electrode;
a first oxide semiconductor layer over the first insulating layer;
a second insulating layer over a part of the first oxide semiconductor layer;
a second oxide semiconductor layer and a third oxide semiconductor layer over the first oxide semiconductor layer and the second insulating layer;
a second conductive layer over the first insulating layer and the second oxide semiconductor layer;
a third conductive layer over the first insulating layer and the third oxide semiconductor layer;
a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer;
and
a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole,
wherein the common connection portion comprises:
a fifth conductive layer over the first substrate;
a fourth insulating layer having a second contact hole, the fourth insulating layer formed over the fifth conductive layer;
and
a sixth conductive layer over the fourth insulating layer and electrically connected to the fifth conductive layer through the second contact hole,
wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,
wherein the gate electrode and the fifth conductive layer are formed of the same material,
wherein the fourth conductive layer and the sixth conductive layer are formed of the same material, and
wherein the first insulating layer and the fourth insulating layer are formed of the same material.

21 more elements

A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;
a second substrate having a first conductive layer;
and
a conductive particle between the first substrate and the second substrate,
wherein the pixel portion comprises:
a gate electrode over the first substrate;
a first insulating layer over the gate electrode;
a first oxide semiconductor layer over the first insulating layer;
a second insulating layer over a part of the first oxide semiconductor layer;
a second oxide semiconductor layer and a third oxide semiconductor layer over the first oxide semiconductor layer and the second insulating layer;
a second conductive layer over the first insulating layer and the second oxide semiconductor layer;
a third conductive layer over the first insulating layer and the third oxide semiconductor layer;
a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer;
and
a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole,
wherein the common connection portion comprises:
a fifth conductive layer over the first substrate;
a fourth insulating layer over the fifth conductive layer;
a sixth conductive layer over the fourth insulating layer;
a fifth insulating layer having a second contact hole formed over the sixth conductive layer;
and
a seventh conductive layer over the fifth insulating layer and electrically connected to the sixth conductive layer through the second contact hole,
wherein the seventh conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,
wherein the gate electrode and the fifth conductive layer are formed of the same material,
wherein the second conductive layer, the third conductive layer, and the sixth conductive layer are formed of the same material,
wherein the fourth conductive layer and the seventh conductive layer are formed of the same material,
wherein the first insulating layer and the fourth insulating layer are formed of the same material, and
wherein the third insulating layer and the fifth insulating layer are formed of the same material.

25 more elements

A semiconductor device comprising:

a first substrate having a pixel portion and a common connection portion;
a second substrate having a first conductive layer;
and
a conductive particle between the first substrate and the second substrate,
wherein the pixel portion comprises:
a gate electrode over the first substrate;
a first insulating layer over the gate electrode;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over a part of the oxide semiconductor layer;
a second conductive layer on the oxide semiconductor layer;
a third conductive layer on the oxide semiconductor layer;
a third insulating layer over the second and third conductive layers and the second insulating layer, the third insulating layer having a first contact hole formed over the third conductive layer;
and
a fourth conductive layer over the third insulating layer and electrically connected to the third conductive layer through the first contact hole,
wherein the common connection portion comprises:
a fourth insulating layer over the first substrate;
a fifth conductive layer over the fourth insulating layer;
a fifth insulating layer having a second contact hole formed over the fifth conductive layer;
and
a sixth conductive layer over the fifth insulating layer and electrically connected to the fifth conductive layer through the second contact hole,
wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle,
wherein the second conductive layer, the third conductive layer, and the fifth conductive layer are formed of the same material,
wherein the fourth conductive layer and the sixth conductive layer are formed of the same material,
wherein the first insulating layer and the fourth insulating layer are formed of the same material, and
wherein the third insulating layer and the fifth insulating layer are formed of the same material.

22 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/556,593Filed 10 Sep 2009
Priority: JP 2008-24130719 Sep 2008
Published: 25 Mar 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10K 59/1213
Characterised by the geometry or disposition of pixel elements: the pixel elements being TFTs