Non-volatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSuk-pil Kim, June-mo Koo, Tae-eung Yoon
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Abstract
Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile memory device. The non-volatile memory device may include at least one first electrode and at least one second electrode that cross each other. At least one data storage layer may be disposed on a section where the at least one first electrode and the at least one second electrode cross each other. The at least one first electrode may include a first conductive layer and a first semiconductor layer.
Claims20
A non-volatile memory device comprising:
- at least one first electrode including at least one first semiconductor layer of a first conductive type and at least one first conductive layer having a resistivity lower than a resistivity of the at least one first semiconductor layer;
- at least one second electrode including at least one second semiconductor layer of a second conductive type that is opposite of the first conductive type and crosses the at least one first electrode;
- and
- at least one data storage layer on a section where the at least one first semiconductor layer of the at least one first electrode and the at least one second semiconductor layer of the at least one second electrode cross each other.
Dependencies are inferred from the claim text.