Polishing slurry
AssigneeFUJIFILM Corporation
InventorsAtsushi Mizutani, Tooru Yamada
Life of this patent
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Abstract
A polishing slurry used for chemical mechanical polishing of a barrier layer and an interlayer dielectric film in manufacturing a semiconductor integrated circuit includes two colloidal silicas which have association degrees differing from each other by at least 0.5 and primary particle sizes differing from each other by 5.0 nm or less, an anticorrosive, and an oxidizer. The polishing slurry is used in the barrier metal CMP and is capable of achieving a good polishing rate on the interlayer dielectric film while simultaneously reducing scratching which is a defect on the polished surface.
Claims5
A polishing slurry used for chemical mechanical polishing of a barrier layer and an interlayer dielectric film in manufacturing a semiconductor integrated circuit, the polishing slurry comprising:
- two colloidal silicas which have association degrees differing from each other by at least 0.5 and primary particle sizes differing from each other by 5.0 nm or less;
- an anticorrosive;
- and
- an oxidizer.
Dependencies are inferred from the claim text.