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US 2010/0072173 A1Published application
Surface profile adjustment using gas cluster ion beam processing
AssigneeTEL Epion Inc.
InventorJohn J. Hautala
Life of this patent
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Abstract
A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation.
Claims20
A method of performing corrective processing of a surface on a workpiece, comprising:
- selectively forming a sacrificial material on one or more regions of a surface on a workpiece using a gas cluster ion beam (GCIB);
- and
- adjusting a surface profile of said surface on said workpiece by performing an etching process following said selective formation, wherein said etching process etches said sacrificial material at a first etch rate, and wherein said etching process etches said workpiece at a second etch rate.
A method of performing corrective processing on a workpiece, comprising:
- acquiring metrology data for a workpiece;
- computing correction data for said workpiece using said metrology data;
- applying said correction data to said workpiece using a gas cluster ion beam (GCIB) to selectively form a sacrificial material on one or more regions of a surface on said workpiece;
- and
- performing an etching process to remove said sacrificial material and at least a portion of said surface on said workpiece.
2 more elements
A processing system for performing corrective processing of a surface on a workpiece, comprising:
- a metrology system configured to acquire metrology data for a workpiece;
- a multi-process control system configured to compute correction data for said workpiece using said metrology data;
- a gas cluster ion beam (GCIB) processing system configured to apply said correction data to said workpiece to selectively deposit a sacrificial material on one or more regions of a surface on said workpiece;
- an etching system configured to adjust a surface profile of said surface of said workpiece by performing an etching process to remove said sacrificial material and at least a portion of said surface on said workpiece;
- and
- a workpiece handling system coupled to said GCIB processing system, and said etching system, and configured to transport said workpiece to and from said GCIB processing system and said etching system according to instructions from said multi-process control system.
3 more elements
Dependencies are inferred from the claim text.