Method Of Fabricating A Printhead IC
AssigneeSilverbrook Research Pty Ltd
InventorKia Silverbrook
Life of this patent
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Abstract
Provided is a method of fabricating a printhead integrated circuit (IC). The method includes the step of depositing metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer is masked with a photoresist. A pit is etched into the silicon wafer substrate, said pit having a base and sidewalls. Etching is carried out along an edge of the substrate to expose the last metal layer to define bonding pads for operatively connecting a microprocessor. A step of etching portions adjacent the pit to expose the outermost metal layer to define electrode portions. The electrode portions are for supporting a heater element to be suspended in the pit.
Claims8
A method of fabricating a printhead integrated circuit, said method comprising the steps of:
- depositing a plurality of metal layers interspersed with interlayer dielectric layers onto a silicon wafer substrate;
- depositing a passivation layer onto an outermost metal layer;
- masking at least a portion of the passivation layer with a photoresist;
- etching a pit in the substrate at an unmasked portion of the passivation layer, said pit having a base and sidewalls;
- etching along an edge of the substrate to expose the outermost metal layer to define bonding pads for connection to a micro processor;
- and
- etching at least two areas adjacent the pit to expose the outermost metal layer to define electrode portions for supporting a heater element to be suspended in the pit between the electrode portions.
Dependencies are inferred from the claim text.