Process for forming a ceramic oxide material with a pyrochlore structure having a high dielectric constant and implementation of this process for applications in microelectronics

Abstract

The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.

Dependencies are inferred from the claim text.