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US 2010/0062599 A1Published application
Method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsKazutoyo Takano, Junichi Murakami, Tadaharu Minato
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Abstract
A method for manufacturing a semiconductor device includes the steps of forming a P-type region on a surface of a semiconductor substrate, forming at least one Al electrode on the P-type region, forming an interlayer film in contact with the at least one Al electrode, the interlayer film being of a material which is less reactive with Si than is Al, and forming a semi-insulating film on the interlayer film, the semi-insulating film containing Si.
Claims9
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a P-type region on a surface of a semiconductor substrate;
- forming at least one Al electrode on said P-type region;
- forming an interlayer film in contact with said at least one Al electrode, said interlayer film being of a material which is less reactive with Si than is Al;
- and
- forming a semi-insulating film on said interlayer film, said semi-insulating film containing Si.
2 more elements
Dependencies are inferred from the claim text.