Semiconductor device and manufacturing method for the same
AssigneeKabushiki Kaisha Toshiba
InventorsKazuaki Nakajima, Kyoichi Suguro
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Abstract
In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.
Claims6
-15. (canceled)
A manufacturing method of a semiconductor device on which are formed an N-type MOS transistor and a P-type MOS transistor, the method comprising the steps of:
- forming a gate insulation film on a semiconductor substrate;
- forming a conductor film, which constitutes a gate electrode, on the surface of the gate insulation film in accordance with a formation method that uses an organic material;
- forming an insulation film so as to cover at least a part of the gate electrode of the P-type MOS transistor;
- and
- heating the semiconductor substrate on which the insulation film is formed in a combination of an oxidizing environment and a reducing environment.
Dependencies are inferred from the claim text.