Method for forming silicon thin film
AssigneeNissin Electric Co., Ltd.
InventorEiji Takahashi
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Abstract
A method for forming a silicon thin film which can form a crystalline silicon thin film relatively at a low temperature, economically and productively is provided. A method for forming a silicon thin film which can provide a substrate for thin film transistor with a lowered leakage current is provided. Provided is a method for forming a silicon thin film in which a substrate S is exposed to plasma of a gas for hydrogen bonding process containing hydrogen, and a crystalline silicon thin film is then formed on the substrate. By employing as the substrate S a substrate in which the film formation target face is a nitrogen-containing gate insulating film formed on the substrate body, a substrate which can provide a thin film transistor having high electron mobility and low OFF-current can be obtained.
Claims10
A method for forming a silicon thin film which forms a crystalline silicon thin film by a plasma CVD method on a substrate disposed in a deposition chamber, the method comprising:
- a hydrogen bonding step in which prior to forming the crystalline silicon thin film on the substrate, plasma of a gas for hydrogen bonding process containing hydrogen is formed in the deposition chamber, and a film formation target face of the substrate is exposed to the plasma to cause hydrogen to bond onto the substrate face;
- and
- a silicon thin film formation step in which plasma of a gas for forming crystalline silicon thin film containing a silane-based gas is formed in the deposition chamber after the hydrogen bonding step, and a crystalline silicon thin film is formed on the substrate face which has been subjected to the hydrogen bonding process in the plasma.
Dependencies are inferred from the claim text.