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US 2010/0062576 A1Published application
Method for fabricating cmos image sensor with plasma damage-free photodiode
AssigneeIntellectual Ventures II LLC
InventorHan-Seob Cha
Life of this patent
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Abstract
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.
Claims25
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor, the method comprising:
- forming a gate structure on a substrate;
- performing a first ion-implantation process on the substrate proximate the gate structure to form a photodiode using a first mask;
- forming a first patterned blocking layer over the photodiode;
- forming spacers on sidewalls of the gate structure and on sidewalls of the first patterned blocking layer;
- and
- performing a second ion-implantation process using the spacers and a mask pattern as a second mask.
3 more elements
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor, the method comprising:
- forming spacers on sidewalls of a gate structure and on sidewalls of a patterned blocking layer;
- and
- performing an ion-implantation process using the spacers and a mask pattern.
Dependencies are inferred from the claim text.