Semiconductor device and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsAtsuhiro KINOSHITA, Yoshinori TSUCHIYA, Junji KOGA
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate; a first gate insulation film formed on the semiconductor substrate; a second gate insulation film formed on the semiconductor substrate; a first gate electrode formed on the first gate insulation film and fully silicided; and a second gate electrode formed on the second gate insulation film and fully silicided, a gate length or a gate width of the second gate electrode being larger than that of the first gate electrode, and a thickness of the second gate electrode being smaller than that of the first gate electrode.
Claims13
1-20. (canceled)
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor substrate having a first surface region and a second surface region;
- epitaxially growing a semiconductor region on the second surface region;
- forming a first gate insulation film on the first surface region and forming a second gate insulation film on the semiconductor region;
- forming a first silicon layer above the first gate insulation film, and forming a second silicon layer above the second gate insulation film, an upper surface of the first silicon layer having a height equal to that of the second silicon layer, the first silicon layer having a thickness larger than that of the second silicon layer, and at least one of a gate length and a gate width of the first silicon layer being shorter than the gate length or gate width of the second silicon layer, respectively;
- depositing a metal film on the first silicon layer and on the second silicon layer;
- and
- fully siliciding the first silicon layer and the second silicon layer.
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor substrate having a first surface region and a second surface region;
- etching off the first surface region to form a third surface region;
- forming a first gate insulation film on the third surface region and forming a second gate insulation film on the second surface region;
- forming a first silicon layer above the first gate insulation film, and forming a second silicon layer above the second gate insulation film, an upper surface of the first silicon layer having a height equal to that of the second silicon layer, the first silicon layer having a thickness larger than that of the second silicon layer, and at least one of a gate length and a gate width of the first silicon layer being shorter than the gate length or gate width of the second silicon layer, respectively;
- depositing a metal film on the first silicon layer and on the second silicon layer;
- and
- fully siliciding the first silicon layer and the second silicon layer.
Dependencies are inferred from the claim text.