Method for producing an electronic component, method for producing a thyristor, method for producing a drain-extended mos filed-effect transistor, electronic component, drain-extended mos field-effect transistor, electronic component arrangement

A method for producing a thyristor, the method comprising:

• forming a first doped connection region and a second doped connection region on or above a substrate, wherein the first doped connection region has a first conductivity type and wherein the second doped connection region has a second conductivity type;
• forming at least two body regions between the first connection region and the second connection region;
• and
• doping at least one of the at least two body regions by means of introducing at least one of dopant atoms of the first conductivity type and dopant atoms of the second conductivity type, wherein the dopant atoms are introduced into the at least one of the at least two body regions using a halo implantation method or a Vt implantation method or both methods.