Methods of manufacturing image sensors having shielding members

Abstract

An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon.

Dependencies are inferred from the claim text.