US 2010/0062546 A1 · METHOD OF MANUFACTURING SOI SUBSTRATE

Abstract

An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. In a process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a predetermined number of times, or as long as it meets predetermined conditions. In a case where a first single crystal semiconductor substrate cannot be used as a bond substrate, it is bonded to a second single crystal semiconductor substrate. Then, a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate.

Claims14

Dependent claims

A method of manufacturing an SOI substrate, comprising

a first step of preparing a first single crystal semiconductor substrate to make it a bond substrate and preparing a base substrate,
a second step of forming an embrittlement region in the bond substrate by irradiating a surface of the bond substrate with accelerated ions, and bonding the surface of the bond substrate and the base substrate to each other with an insulating layer therebetween, and
a third step of providing a single crystal semiconductor layer over the base substrate with the insulating layer therebetween by splitting the bond substrate at the embrittlement region,
wherein the bond substrate split at the embrittlement region in the third step is reused as a bond substrate in the first step (n−1) times (n is a natural number above or equal to two),
wherein, after repeating the steps from the first step to the third step n times, a stacked-layer substrate is formed by bonding the bond substrate split in the nth third step to a second single crystal semiconductor substrate, and
wherein the stacked-layer substrate is used as a bond substrate in the first step.

3 more elements

A method of manufacturing an SOI substrate, comprising

a first step of forming an embrittlement region in a bond substrate having a single crystal side by irradiating the bond substrate with accelerated ions;
a second step of bonding the single crystal side of the bond substrate and a base substrate to each other with an insulating layer therebetween, and
a third step of forming a single crystal semiconductor layer over the base substrate with the insulating layer therebetween by splitting the bond substrate at the embrittlement region;
after the third step, reusing the bond substrate as a bond substrate in the first through third steps for forming another single crystal semiconductor layer;
after repeatedly reusing the bond substrate, bonding the bond substrate to a single crystal semiconductor substrate to form a stacked layer substrate, and
using the stacked layer substrate as a bond substrate in the first through third steps.

3 more elements

Dependencies are inferred from the claim text.

Method of manufacturing soi substrate

Life of this patent

Method of manufacturing soi substrate

Life of this patent

Abstract

Claims14