Method of forming resist pattern
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorJun Iwashita
Life of this patent
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Abstract
Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S″) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.
Claims7
A method of forming a resist pattern, comprising:
- applying a positive resist composition on a support to form a first resist film;
- conducting selective exposure of the first resist film through a first mask pattern, and developing the first resist film to form a first resist pattern;
- applying a negative resist composition which comprises an organic solvent (5″) containing an alcohol-based organic solvent on the support that the first resist pattern is formed, thereby forming a second resist film;
- and
- conducting selective exposure of the second resist film through a second mask pattern, and developing the second resist film to form a resist pattern denser than the first resist pattern.
Dependencies are inferred from the claim text.