Low outgassing photoresist compositions

A photoresist composition comprising:

• a polymer comprising a repeat unit having a formula of:
• wherein Z represents a repeat unit of a polymer backbone;
• X is a linking group selected from the group consisting of alkylene, arylene, araalkylene, carbonyl, carboxyl, carboxyalkylene, oxy, oxyalkylene, and combinations thereof, and R is selected from the group consisting of hydrogen, alkyl, aryl, and cycloalkyl groups with the proviso that X and R are not part of the same ring system;
• a photo-acid generator;
• and
• a solvent.

A process for forming a relief image in a photoresist film, comprising:

• applying a photoresist composition on a substrate to form the photoresist film, wherein the photoresist composition comprises a polymer comprising a repeat unit having a formula of:
• wherein Z represents a repeat unit of a polymer backbone;
• X is a linking group selected from the group consisting of alkylene, arylene, araalkylene, carbonyl, carboxyl, carboxyalkylene, oxy, oxyalkylene, and combinations thereof, and R is selected from the group consisting of hydrogen, alkyl, aryl, and cycloalkyl groups with the proviso that X and R are not part of the same ring system, a photo-acid generator, and a solvent;
• exposing the film to radiation using a radiation source;
• and
• developing the photoresist film to form the relief image.