Magnetic Material
AssigneesThe University of Tokyo, Dowa Electronics Materials Co., Ltd.
InventorShin-ichi Ohkoshi
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Abstract
Disclosed is a magnetic material comprising a crystal of ε-GaxFe2-xO3 (wherein 0<x<1) prepared by substituting a part of Ga3+ ion sites of an ε-Fe2O3 crystal with Fe3+ ions and having X-ray diffraction peaks corresponding to the crystal structure of ε-Fe2O3. The coercive force of the magnetic material lowers in accordance with the Ga content thereof, and the saturation magnetization thereof has a maximum value.
Claims8
A magnetic material comprising a crystal of ε-GaxFe2-xO3 (wherein 0<x<1) prepared by substituting a part of Fe3+ ion sites of an ε-Fe2O3 crystal with Ga3+ ions and having X-ray diffraction peaks corresponding to the crystal structure of ε-Fe2O3.
Dependencies are inferred from the claim text.