Method for treating semiconductor processing components and components formed thereby
AssigneeSaint-Gobain Ceramics & Plastics, Inc.
InventorsYeshwanth Narendar, Richard F. Buckley
Life of this patent
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Abstract
A semiconductor processing component can include SiC, wherein the semiconductor processing component has an impurity ratio less than 34:1. The impurity ratio can be a ratio of a first average impurity concentration to a second impurity level, wherein the first average impurity concentration is an average impurity concentration of a impurity from an exposed surface of the semiconductor processing component to a depth of 0.2 microns from the exposed surface, and the second average impurity concentration is an average impurity concentration of the impurity from a depth of 0.8 microns from the exposed surface to a depth of 1.0 micron from the exposed surface.
Claims19
A semiconductor processing component comprising SiC, wherein the semiconductor processing component has an impurity ratio less than 34:1, wherein:
- the impurity ratio is a ratio of a first average impurity concentration to a second impurity level,
- the first average impurity concentration is an average impurity concentration of a impurity from an exposed surface of the semiconductor processing component to a depth of 0.2 microns from the exposed surface;
- and
- the second average impurity concentration is an average impurity concentration of the impurity from a depth of 0.8 microns from the exposed surface to a depth of 1.0 micron from the exposed surface.
Dependencies are inferred from the claim text.