Electro-optic silicon modulator
AssigneeSifotonics Technologies (USA) Inc.
InventorLiang Chen
Life of this patent
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Abstract
In a general aspect, a device includes a substrate, a light transmission formed on a top surface of the substrate, a first contact, and a second contact. The light transmission structure includes a first doped region; a second doped region doped oppositely to the first region; a lateral junction between a part of the first doped region and a part of the second doped region, the lateral junction oriented substantially perpendicular to the top surface of the substrate; and a vertical junction between a part of the first doped region and a part of the second doped region, the vertical junction oriented substantially parallel to the top surface of the substrate. The first contact is in electrical contact with the first region and the second contact is in electrical contact with the second region.
Claims31
A device comprising:
- a substrate;
- a light transmission structure formed on a top surface of the substrate, the light transmission structure comprising:
- a first doped region,
- a second doped region, the second region doped oppositely to the first region,
- a lateral junction between a part of the first doped region and a part of the
- second doped region, the lateral junction oriented substantially perpendicular to the top surface of the substrate, and
- a vertical junction between a part of the first doped region and a part of the
- second doped region, the vertical junction oriented substantially parallel to the top surface of the substrate;
- a first contact in electrical contact with the first region;
- and
- a second contact in electrical contact with the second region.
A method of making a light transmission structure, comprising:
- doping a first region of a substrate;
- doping a second region of the substrate adjacent to the first region, the second region doped oppositely to the first region;
- forming a third region, a first part of the third region above a part of the first
- region and a second part of the third region above a part of the second region;
- forming a first contact in electrical contact with the first region and positioned to a first side of the third region;
- and
- forming a second contact in electrical contact with the first region and positioned to a second side of the third region.
Dependencies are inferred from the claim text.