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US 2010/0060764 A1Published application
High gain read circuit for 3d integrated pixel
AssigneeOmniVision Technologies, Inc.
InventorsJohn P. McCarten, Joseph R. Summa, Todd J. Anderson, Cristian A. Tivarus
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Abstract
An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
Claims10
An image sensor comprising:
- (a) a first wafer comprising:
- (i) a photosensitive area;
- (ii) a charge-to-voltage conversion region;
- (b) a second wafer comprising:
- (i) a first amplifier that receives a signal from the charge-to-voltage conversion region;
- (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier;
- (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
4 more elements
An imaging device comprising:
- an image sensor comprising:
- (a) a first wafer comprising:
- (i) a photosensitive area;
- (ii) a charge-to-voltage conversion region;
- (b) a second wafer comprising:
- (i) a first amplifier that receives a signal from the charge-to-voltage conversion region;
- (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier;
- (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
5 more elements
Dependencies are inferred from the claim text.