Solid-state imaging device and imaging apparatus
AssigneeFUJIFILM Corporation
InventorMakoto SIZUKUISI
Life of this patent
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Abstract
A solid-state imaging device 1 includes a photoelectric conversion section 17, a writing transistor 18 and a reading transistor 19. The photoelectric conversion section 17 is provided in a semiconductor substrate. The writing transistor 18 includes a floating gate 16 and a control gate 15. The floating gate 16 is provided above the semiconductor substrate. The control gate 15 injects electric charges generated in the photoelectric conversion section 17 into the floating gate 16. The reading transistor 19 reads a signal corresponding to the electric charges injected into the floating gate 16. The writing transistor 18 has a two-terminal structure having a source connected to the photoelectric conversion section 17, and the control gate 15.
Claims7
A solid-state imaging device comprising:
- a photoelectric conversion section that is provided in a semiconductor substrate;
- a writing transistor including
- an electric charge accumulation section that is provided above the semiconductor substrate, and
- a control gate that injects electric charges generated in the photoelectric conversion section into the electric charge accumulation section;
- and
- a reading transistor that reads a signal corresponding to the electric charges injected into the electric charge accumulation section, wherein
- the writing transistor has a two-terminal structure having
- a source connected to the photoelectric conversion section, and
- the control gate.
A solid-state imaging device comprising:
- a photoelectric conversion section that is provided in a semiconductor substrate;
- a writing transistor including
- an electric charge accumulation section that is provided above the semiconductor substrate, and
- a control gate that injects electric charges generated in the photoelectric conversion section into the electric charge accumulation section;
- and
- a reading transistor that reads a signal corresponding to the electric charges injected into the electric charge accumulation section, wherein
- the writing transistor has a source connected to the photoelectric conversion section and the control gate, but has no drain.
Dependencies are inferred from the claim text.