Solid-state image pickup device

Abstract

A solid-state image pickup device (1) comprises: an image sensor wafer (2A) including image sensors (3); an optically-transparent protection member (4) connected by use of an adhesive agent (7) via a spacer (5) arranged to surround the image sensors (3); and an electrostatic (ESD) protection circuit (10) disposed on the image sensor wafer (2A) so as to avoid a position corresponding to a connected surface where the spacer (5) and the image sensor wafer (2A) are connected. Accordingly, in this configuration, even when polarization occurs in the adhesive agent, since the p-well layer between diffusion layers of the ESD protection circuit is not disposed immediately below the connected surface, the p-well layer is not inverted by electric charges in the element interface and thus parasitic MOS transistor does not turn on, allowing suppression of leak current.

Dependencies are inferred from the claim text.