Cascode circuit
AssigneeMitsubishi Electric Corporation
InventorsKo KANAYA, Seiki GOTO, Shinsuke WATANABE
Life of this patent
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Abstract
A cascode circuit for a high-gain or high-output millimeter-wave device that operates with stability. The cascode circuit including two cascode-connected transistors includes: a first high electron mobility transistor (HEMT) including a source that is grounded; a second HEMT including a source connected to a drain of the first HEMT; a reflection gain restricting resistance connected to the gate of the second HEMT, for restricting reflection gain; and an open stub connected to a side of the reflection gain restricting resistance which is opposite the side connected to the second HEMT, for short-circuiting high-frequency signals at a predetermined frequency and nearby frequencies.
Claims16
A cascode circuit including two cascode-connected transistors, comprising:
- a first transistor including,
- as a first terminal, one of a source and an emitter, the first terminal being grounded, and,
- as a second terminal, one of a drain and a collector;
- a second transistor including,
- as a first terminal, one of a source and an emitter, the first terminal being connected to the second terminal of the first transistor,
- as a second terminal, one of a gate and a base, and,
- as a third terminal, one of a drain and a collector;
- a signal improving circuit connected to the second terminal of the second transistor, for improving and outputting an input signal input to the signal improving circuit;
- and
- a filter circuit connected to a side of the signal improving circuit which is opposite a side of the signal improving circuit that is connected to the second transistor, for short-circuiting high-frequency signals at a predetermined frequency, including at frequencies near the predetermined frequency.
Dependencies are inferred from the claim text.