Switch-less bidirectional amplifier

A method for amplifying signals in a bi-directional amplifier comprising the steps of:

• coupling at least one first biased semiconductor amplification element to at least one first impedance matching network and at least one first biasing network;
• coupling at least one second biased semiconductor amplification element to at least one second impedance matching network and at least one second biasing network;
• coupling said at least one first and second biased amplification elements in series or in parallel to each other;
• and
• using said at least one first and second biasing network to bias the at least one first biased semiconductor amplification element below threshold and the at least one second biased semiconductor amplification element above threshold or vice-versa in order to amplify a signal received or to be transmitted through said bi-directional amplifier.

A method for directing a signal between two or more different paths comprising the steps of:

• coupling at least one first biased semiconductor amplification element to at least one first impedance matching network and at least one first biasing network;
• coupling one or more additional first biased semiconductor amplification elements in parallel to said at least one first biased semiconductor amplification element;
• coupling one or more additional first impedance matching networks to each of the one or more first biased semiconductor amplification elements;
• coupling at least one second biased semiconductor amplification element to the at least one first biased semiconductor amplification element, at least one first impedance matching network and at least one first biasing network;
• coupling one or more additional second biased semiconductor amplification elements in parallel to said at least one second biased semiconductor amplification element;
• coupling one or more additional second impedance matching networks to each of the one or more second biased semiconductor amplification elements;
• coupling at least one additional first biasing network to each of the one or more additional first biased semiconductor amplification elements and at least one additional second biasing network to each of the one or more additional second biased semiconductor amplification elements;
• and
• biasing at least one of said first biased semiconductor amplification elements above threshold and at least one of said second biased amplification elements below threshold or vice versa in order to direct and amplify a received signal or a signal to be transmitted through the bi-directional amplifier.

A mobile terminal, comprising:

• a bi-directional amplifier for amplification of signals received or signals to be transmitted in a communication circuit, said bi-directional amplifier further comprising:
• at least one first biased semiconductor amplification element coupled to a first impedance matching network;
• at least one second biased semiconductor amplification element coupled to a second impedance matching network;
• and
• a first device for biasing said first biased semiconductor amplification element and a second device for biasing said second biased semiconductor amplification element wherein the direction of signal amplification is controlled by said first or said second device for biasing said first or second biased semiconductor amplification element and where said first and said second biased semiconductor amplification elements are coupled in an anti-parallel configuration.

A telecommunications infrastructure component, comprising:

• a bi-directional amplifier for amplification of signals received or signals to be transmitted in a communication circuit, said bi-directional amplifier further comprising:
• at least one first biased semiconductor amplification element coupled to a first impedance matching network;
• at least one second biased semiconductor amplification element coupled to a second impedance matching network;
• a first device for biasing said first biased semiconductor amplification element and a second device for biasing said second biased semiconductor amplification element wherein the direction of signal amplification is controlled by said first or said second device for biasing said first or second biased semiconductor amplification element and wherein said first and said second biased semiconductor amplification elements are coupled in an anti-parallel configuration.