Method and circuit arrangement for increasing the dielectric strength of metal oxide transistors at low temperatures
AssigneeOsram Gesellschaft Mit Beschraenkter Haftung
InventorJoachim Muehlschlegel
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Abstract
A method and circuit arrangement for increasing the dielectric strength of at least one metal oxide transistor at low temperatures is described. Various embodiments include heating the metal oxide transistor prior to the application of a voltage in the vicinity of a breakdown voltage of the metal oxide transistor.
Claims23
A method for increasing the dielectric strength of at least one metal oxide transistor of an electronic circuit arrangement at low temperatures, the method comprising heating the metal oxide transistor prior to the application of a voltage in the vicinity of a breakdown voltage of the metal oxide transistor.
A circuit arrangement having an increased dielectric strength at low temperatures, the circuit arrangement comprising at least one metal oxide transistor, wherein the circuit arrangement is configured to heat the at least one metal oxide transistor before the circuit arrangement applies to the at least one metal oxide transistor a voltage in the vicinity of the reverse voltage of the at least one metal oxide transistor.
Dependencies are inferred from the claim text.