Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods

A semiconductor system, comprising:

• a semiconductor substrate material having a through-substrate via extending along a via axis;
• a conductive material disposed in the via;
• and
• a penetrating structure aligned along the via axis and extending away from the via, the penetrating structure having an external surface, with a contour of the external surface varying spatially in a non-monotonic manner.

A semiconductor system, comprising:

• a semiconductor substrate material having a through-substrate via extending along a via axis;
• a conductive material disposed in the via;
• and
• a penetrating structure aligned with and extending away from the via, the penetrating structure having at least one generally sharp surface feature extending away from the via.

A method for making a semiconductor system, comprising:

• forming a via in a second of two semiconductor substrates, the via having a via wall, an open end and a closed end;
• disposing a conductive material on the wall of the via, with the conductive material having a greater thickness toward the open end than toward the closed end;
• and
• electrically and mechanically connecting the second semiconductor substrate to a first semiconductor substrate by engaging a penetrating structure of the first semiconductor substrate and the conductive material of the second semiconductor substrate with each other.

A method for making a semiconductor system, comprising:

• forming a recess in a semiconductor substrate;
• disposing a support material in the recess;
• disposing a layer of engaging material on the support material in the recess;
• and
• removing at least some of the support material in the recess so that an inwardly extending portion of the engaging material is cantilevered in the recess.

A method for making a semiconductor system, comprising:

• forming a penetrating structure carried by a first semiconductor substrate;
• forming a recess in a second semiconductor substrate;
• receiving the penetrating structure of the first semiconductor substrate in the recess of the second semiconductor substrate;
• and
• disposing a conductive material between the penetrating structure and walls of the recess;
• and
• connecting the first and second semiconductor substrates by joining the conductive material with the penetrating structure and with the walls of the recess.