Adhesion of diffusion barrier on copper-containing interconnect element
AssigneeNXP B.V.
InventorsLaurent Georges Gosset, Joaquin Torres, Sonarith Chhun
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Abstract
The present invention relates to a method for fabricating a semiconductor device. For improving the adhesion between a copper-containing interconnect element and a diffusion barrier on top of it, a first dielectric layer (108) of a first dielectric material is deposited on an exposed surface (102.1) of the interconnect element. Susequently, particles (110) are implanted into the first dielectric layer and the interconnect element (102) so as to let the interconnect material mix with the first dielectric material in a first interface region (102.2) between the interconnect element and the first dielectric layer.
Claims10
A semiconductor device comprising:
- an interconnect element of a copper-containing interconnect material;
- a first dielectric layer of a first dielectric material that covers the interconnect element;
- wherein implanted particles are present in the first dielectric layer and in the interconnect element, and wherein a first interface region between the first dielectric layer and the interconnect element forms a diffusion-barrier against a diffusion of copper and comprises a mixture of the interconnect material and of the first dielectric material.
A method for fabricating a semiconductor device, comprising the steps:
- providing a substrate with an interconnect element of a copper-containing interconnect material that has an exposed surface;
- depositing a first dielectric layer of a first dielectric material on the exposed surface of the interconnect element;
- implanting particles into the first dielectric layer and the interconnect element so as to let the interconnect material mix with the first dielectric material in a first interface region between the interconnect element and the first dielectric layer.
Dependencies are inferred from the claim text.