Semiconductor Device and Method of Forming Vertically Offset Bond on Trace Interconnects on Recessed and Raised Bond Fingers

A method of making a semiconductor device, comprising:

• forming a first conductive layer extending above a surface of a carrier;
• pressing the first conductive layer into a surface of a substrate so that the first conductive layer is recessed below the surface of the substrate;
• removing the carrier;
• forming a second conductive layer above the surface of the substrate to create a vertical offset between the first and second conductive layers;
• and
• forming an interconnect structure on the first and second conductive layers.

A method of making a semiconductor device, comprising:

• forming a first conductive layer recessed below a surface of a substrate;
• forming a second conductive layer raised above the surface of the substrate to create a vertical offset between the first and second conductive layers;
• and
• forming an interconnect structure on the first and second conductive layers.

A semiconductor device, comprising:

• a substrate;
• a first conductive layer recessed below a surface of the substrate;
• a second conductive layer raised above the surface of the substrate to create a vertical offset between the first and second conductive layers;
• and
• an interconnect structure formed on the first and second conductive layers.