Semiconductor wafer composed of monocrystalline silicon and method for producing itö
AssigneeSiltronic AG
InventorsTimo Mueller, Gudrun Kissinger, Walter Heuwieser, Martin Weber
Life of this patent
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Abstract
Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a PV region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmim of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.
Claims19
A semiconductor wafer having a front face, a rear face, and a bulk region therebetween, composed of monocrystalline silicon, and doped with nitrogen, comprising:
- an OSF region and a Pv region, wherein the OSF region extends from the center of the semiconductor wafer radially toward the edge of the semiconductor wafer as far as the Pv region;
- a BMD density in the bulk region of at least 3.5×108 cm−3;
- a radial distribution of the BMD density with a fluctuation range expressed by the quotient BMDmax/BMDmin of not more than 3, where BMDmax and BMDmin represent the maximum and minimum BMD density, respectively;
- and an OSF density of less than 10 cm−2.
Dependencies are inferred from the claim text.