Method of fabricating a semiconductor device
AssigneeInfineon Technologies AG
InventorsEdmund Riedl, Ivan Nikitin, Johannes Lodermeyer, Robert Bergmann, Karsten Guth
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Abstract
A method of fabricating a semiconductor device. One embodiment provides a metal carrier. A semiconductor chip is provided. A porous layer is produced at a surface of at least one of the carrier and the semiconductor chip. The semiconductor chip is placed on the carrier. The resulting structure is heated until the semiconductor chip is attached to the carrier.
Claims25
A method of fabricating a semiconductor device, comprising:
- providing a metal carrier;
- providing a semiconductor chip;
- exposing at least one of the carrier and the semiconductor chip to a metal ion containing liquid;
- applying a voltage between the metal ion containing liquid and at least one of the carrier and the semiconductor chip;
- placing the chip on the carrier;
- and
- heating the carrier and the semiconductor chip until the chip is attached to the carrier.
A method of fabricating a semiconductor device, comprising:
- providing a metal carrier;
- providing a semiconductor chip;
- producing a porous layer at a surface of at least one of the carrier and the semiconductor chip;
- placing the semiconductor chip on the carrier;
- and
- heating the resulting structure until the semiconductor chip is attached to the carrier.
A semiconductor device, comprising:
- a metal carrier;
- a semiconductor chip disposed adjacent the carrier;
- and
- a porous layer provided between the carrier and the semiconductor chip.
An electrical device, comprising:
- a first metal conductor;
- a second metal conductor;
- and
- an electrically conducting porous layer provided between the first metal conductor and the second metal conductor.
An electrical device, comprising:
- a fuse, the fuse comprising an electrically conducting porous material.
Dependencies are inferred from the claim text.