Semiconductor Device and Method of Forming an IPD over a High-Resistivity Encapsulant Separated from other IPDS and Baseband Circuit

A method of manufacturing a semiconductor device, comprising:

• providing a sacrificial substrate;
• forming a first conductive layer over the sacrificial substrate;
• forming a first integrated passive device (IPD) in a first region over the first conductive layer;
• forming a conductive pillar over the first conductive layer;
• forming a high-resistivity encapsulant over the first IPD to a top surface of the conductive pillar;
• and
• forming a second IPD over the high-resistivity encapsulant.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first integrated passive device (IPD) over the first conductive layer;
• forming a conductive pillar over the first conductive layer;
• forming an encapsulant over the first IPD to a top surface of the conductive pillar;
• and
• forming a second IPD over the encapsulant.

A semiconductor device, comprising:

• a substrate;
• a first conductive layer formed over the substrate;
• a first integrated passive device (IPD) formed in a first region over the first conductive layer;
• a conductive pillar formed over the first conductive layer;
• a high-resistivity encapsulant formed over the first IPD to a top surface of the conductive pillar;
• and
• a second IPD formed over the high-resistivity encapsulant.