Semiconductor Device and Method of Forming Shielding Layer over Integrated Passive Device Using Conductive Channels

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming an integrated passive device (IPD) over the substrate;
• forming a conductive pillar over the first conductive layer;
• and
• forming a shield layer over the conductive pillar, the shield layer being electrically connected to the conductive pillar to shield the IPD from electromagnetic interference (EMI).

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming an integrated passive device (IPD) over the substrate;
• forming a conductive channel over the first conductive layer;
• and
• forming a shield layer over the conductive channel, the shield layer being electrically connected to the conductive channel.

A semiconductor device, comprising:

• a substrate;
• a first conductive layer formed over the substrate;
• an integrated passive device (IPD) formed over the substrate;
• a conductive channel formed over the first conductive layer;
• and
• a shield layer formed over the conductive channel, the shield layer being electrically connected to the conductive channel to shield the IPD from electromagnetic interference (EMI).