Semiconductor component and method of manufacture
AssigneeSemiconductor Components Industries, LLC
InventorMohammed Tanvir Quddus
Life of this patent
Estimating the term…
Abstract
A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate.
Claims29
A semiconductor component, comprising:
- a first semiconductor material of a first conductivity type having first and second major surfaces;
- at least one trench extending from the first major surface into the semiconductor material, the at least one trench having a sidewall and a floor;
- a second semiconductor material adjacent the sidewall and the floor of the at least one trench, wherein a first portion of the second semiconductor material balances charge in a first direction and a second portion of the second semiconductor material balances charge in a second direction;
- and
- an electrically conductive material in contact with the first semiconductor material and the second semiconductor material.
A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material of a first conductivity type and having a major surface;
- forming one or more trenches in the semiconductor material, the one or more trenches extending from the major surface into the semiconductor material, wherein each trench of the one or more trenches has a sidewall and a floor;
- forming a first layer of semiconductor material adjacent to the sidewall and the floor of the one or more trenches, wherein a first portion of the first layer of semiconductor material adjacent the sidewall serves to balance charge in a first direction and a second portion of the first layer of semiconductor material serves to balance charge in a second direction;
- and
- forming an electrically conductive material in contact with the semiconductor material and the first layer of semiconductor material.
Dependencies are inferred from the claim text.