Back to results
US 2010/0059848 A1Published application
Image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorJi Hoon Hong
Life of this patent
Estimating the term…
Abstract
Embodiments provide an image sensor. The image sensor includes readout circuitry, an interlayer dielectric, an interconnection, and an image sensing device. The interconnection includes a lower barrier metal and a nitride barrier formed under the lower barrier metal. A contact plug electrically connecting the lower barrier metal to a lower interconnect is formed passing through the nitride barrier.
Claims19
An image sensor comprising:
- a readout circuitry on a first substrate;
- an interlayer dielectric over the first substrate;
- an interconnection in the interlayer dielectric and electrically connected to the readout circuitry;
- and
- an image sensing device over the interconnection and electrically connected to the readout circuitry through the interconnection,
- wherein the interconnection comprises:
- a lower barrier metal;
- and
- a nitride barrier formed under the lower barrier metal.
6 more elements
A method for manufacturing an image sensor comprising:
- forming a readout circuitry on a first substrate;
- forming an interlayer dielectric over the first substrate;
- forming an interconnection in the interlayer dielectric and electrically connected to the readout circuitry;
- and
- forming an image sensing device over the interconnection and electrically connected to the readout circuitry through the interconnection,
- wherein forming the interconnection comprises:
- forming a lower barrier metal;
- and
- forming a nitride barrier under the lower barrier metal.
6 more elements
Dependencies are inferred from the claim text.