Image sensor and method of manufacturing the same

A method of manufacturing an image sensor, comprising:

• forming a common electrode on a base substrate;
• sequentially forming an N-type semiconductor film, an intrinsic semiconductor film, a P-type semiconductor film and a transparent and conductive film on the base substrate having the common electrode formed thereon;
• patterning the N-type semiconductor film, the intrinsic semiconductor film, the P-type semiconductor film and the transparent and conductive film to form a switching diode and a sensing diode on the common electrode;
• and
• forming an insulation layer on the substrate having the switching diode and the sensing diode formed thereon.

A method of manufacturing an image sensor, comprising:

• forming first and second intrinsic semiconductor layers on a lower surface of a base substrate, respectively;
• forming first and second P-type semiconductor layers on first and second P-type regions of lower surfaces of the first and second intrinsic semiconductor layers, respectively;
• forming a first N-type semiconductor layer on a first N-type region of the lower surface of the first intrinsic semiconductor layer, the first N-type region being spaced apart from the first P-type region, and a second N-type semiconductor layer on a second N-type region of the lower surface of the second intrinsic semiconductor layer, the second N-type region being adjacent to the first N-type region and spaced apart from the second P-type region;
• and
• forming a first electrode on a lower surface of the first P-type semiconductor layer, a second electrode on a lower surface of the second P-type semiconductor layer, and a common electrode on lower surface of the first and second N-type semiconductor layers such that the first and second N-type semiconductor layers share the common electrode.