Mems device and method for manufacturing the same
AssigneePanasonic Corporation
InventorsYuichi Miyoshi, Tohru Yamaoka, Hidenori Notake, Yusuke Takeuchi
Life of this patent
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Abstract
A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.
Claims42
A MEMS device, comprising:
- a substrate having a first principal plane and a second principal plane opposite to the first principal plane;
- a through hole formed in the substrate;
- and
- a vibrating film formed over the first principal plane so as to cover the through hole, wherein:
- the first principal plane and the second principal plane are both a (110) crystal face;
- and
- the through hole has a substantially rhombic shape on the second principal plane.
A method for manufacturing a MEMS device, comprising the steps of:
- (a) forming a sacrificial layer on a first principal plane of a substrate having the first principal plane and a second principal plane opposite to the first principal plane;
- (b) forming a vibrating film over the sacrificial layer;
- (c) etching the substrate from a side of the second principal plane to thereby form a through hole in the substrate;
- and
- (d) supplying an etchant through the through hole, thereby removing the sacrificial layer and expanding the through hole from a side of the first principal plane, wherein:
- the first principal plane and the second principal plane are both a (110) crystal face;
- and
- the through hole has a substantially rhombic shape on the second principal plane.
A device, comprising:
- a substrate having a first principal plane and a second principal plane opposite to the first principal plane;
- and
- a through hole formed in the substrate;
- wherein:
- the first principal plane and the second principal plane are both a (110) crystal face;
- and
- the through hole has a substantially rhombic shape on the second principal plane.
A method for manufacturing a device, comprising the steps of:
- (a) forming a sacrificial layer on a first principal plane of a substrate having the first principal plane and a second principal plane opposite to the first principal plane;
- (b) etching the substrate from a side of the second principal plane to thereby form a through hole in the substrate;
- and
- (c) supplying an etchant through the through hole, thereby removing the sacrificial layer and expanding the through hole from a side of the first principal plane, wherein:
- the first principal plane and the second principal plane are both a (110) crystal face;
- and
- the through hole has a substantially rhombic shape on the second principal plane.
Dependencies are inferred from the claim text.