Integrated electronic circuit including a thin film portion based on hafnium oxide
AssigneesSTMicroelectronics (Crolles) SAS, Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Grenoble
InventorsCatherine Dubourdieu, Erwan Yann Ruawel, Vincent Cosnier, Sandrine Lhostis, Daniel-Camille Bensahel
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Abstract
An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
Claims32
Integrated electronic circuit comprising at least one thin layer portion based on hafnium oxide, this portion further containing magnesium atoms in the form of a mixed oxide of hafnium and magnesium, wherein the mixed oxide of hafnium and magnesium portion has a dielectric permittivity comprised between 30 and 50.
Method for forming a thin layer containing a mixed oxide of hafnium and magnesium on a substrate, said method comprising the following steps;
- heating the substrate inside an enclosure containing oxygen;
- connecting, via an injector, at least one injection aperture opening on the inside of the enclosure to one or more sources of hafnium and magnesium volatile precursors, said precursors being in liquid form in said sources;
- and
- controlling an aperture of the injector so as to adjust a quantity of the hafnium and magnesium precursors inside the enclosure.
(canceled)
An integrated electronic circuit comprising:
- a substrate in which circuits are formed;
- and
- a thin layer in the form of a hafnium-and-magnesium mixed oxide having a dielectric permittivity in excess of 25.
An integrated electronic circuit comprising at least one thin layer portion based on hafnium oxide, said portion additionally containing magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide.
Dependencies are inferred from the claim text.