Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device comprising:

• forming an isolation region in a semiconductor substrate to segment a first active region and a second active region in the semiconductor substrate;
• forming on the first active region, a first metal-containing conductive film which is a part of a first gate electrode;
• forming on the second active region, a second metal-containing conductive film which is a part of a second gate electrode;
• and
• continuously forming from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film, a third metal-containing conductive film which is a part of each of the first gate electrode and the second gate electrode to be in contact with the first metal-containing conductive film and the second metal-containing conductive film, wherein
• in the forming of the third metal-containing conductive film, the first metal-containing conductive film and the second metal-containing conductive film are formed on the isolation region spaced apart from each other.