Resistive device for high-k metal gate technology and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Chen Chung, Kong-Beng Thei, Harry Chuang
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Abstract
A semiconductor device is provided which includes a semiconductor substrate, an isolation structure formed in the substrate for isolating an active region of the substrate, the isolation structure being formed of a first material, an active device formed in the active region of the substrate, the active device having a high-k dielectric and metal gate, and a passive device formed in the isolation structure, the passive device being formed of a second material different from the first material and having a predefined resistivity.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- an isolation structure formed in the substrate for isolating an active region of the substrate, the isolation structure being formed of a first material;
- an active device formed in the active region of the substrate, the active device having a high-k dielectric and metal gate;
- and
- a passive device formed in the isolation structure, the passive device being formed of a second material different from the first material and having a predefined resistivity.
A semiconductor device comprising:
- a semiconductor substrate;
- an isolation structure formed in the substrate for isolating a first region and second region of the substrate;
- a first transistor formed in the first region and a second transistor formed in the second region, the first and second transistors each having a high-k dielectric and metal gate;
- and
- a polysilicon resistor device formed in the isolation structure, wherein a surface of the polysilicon resistor device and a surface of the isolation structure lie on a same plane.
A semiconductor device comprising:
- a semiconductor substrate;
- a first isolation structure in the substrate for isolating an active region of the substrate;
- a transistor formed in the active region, the transistor having a gate structure that includes a high-k dielectric layer and a metal layer;
- and
- a fuse structure formed on the isolation structure, the fuse structure having a link portion that includes the high-k dielectric layer and the metal layer, wherein the link portion does not include a polysilicon layer disposed on the metal layer.
Dependencies are inferred from the claim text.