Semiconductor device and manufacturing method for the same

A semiconductor device, comprising:

• a first conductive type first semiconductor region arranged on a first electrode side;
• a second semiconductor region including first conductive type first pillar regions and second conductive type second pillar regions are alternately arranged on an element part and a terminal part thereof along a surface on a second electrode side opposite to said first electrode of said first semiconductor region;
• and
• a second conductive type lateral RESURF region formed on the surface of said second semiconductor region on said terminal part on the side of said first semiconductor region.

A semiconductor device, comprising:

• a first conductive type first semiconductor region arranged on a first electrode side;
• a second semiconductor region including first conductive type first pillar regions and second conductive type second pillar regions are alternately arranged on an element part and a terminal part thereof along a surface of said first semiconductor region on a second electrode side opposite to said first electrode side of said first semiconductor region;
• and
• a second conductive type lateral RESURF region formed on the surface of said second semiconductor region on said terminal part on said second electrode side, wherein
• all of said second pillar regions on said terminal part are capable of electrically connecting to said lateral RESURF region.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first conductive type second semiconductor region on a first conductive type first semiconductor region;
• forming trench grooves at the same depth in the same direction in an element part and a terminal part around said element part;
• forming a first conductive first pillar region between said trench grooves adjacent to each other;
• forming a second conductive type second pillar region by embedding a second conductive type semiconductor in said trench groove by epitaxial growth;
• forming a second conductive type lateral RESURF region on a surface of said second semiconductor region on said terminal part opposite to said first semiconductor region;
• and
• repeating said step of forming said first semiconductor region until a predetermined number of layers of said lateral RESURF regions is obtained.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first conductive type second semiconductor region along a surface of a first conductive type first semiconductor region;
• forming a second conductive type lateral RESURF region on a surface of said second semiconductor region on a terminal part opposite to said first semiconductor region;
• repeating said step of forming said first semiconductor region until a predetermined number of layers of said lateral RESURF regions is obtained;
• forming trench grooves at the same depth in the same direction in an element part and said terminal part around said element part;
• forming a first conductive first pillar region between said trench grooves adjacent to each other;
• and
• forming a second conductive type second pillar region by embedding a second conductive type semiconductor in said trench groove by epitaxial growth.

A method of manufacturing a semiconductor device, comprising the steps of:

• embedding an impurity that forms a second conductive lateral RESURF region in a surface of a terminal part of a first conductive first semiconductor region;
• forming a first conductive second semiconductor region along a surface of said first semiconductor region;
• dispersing said impurity forming said second type lateral RESURF region being embedded in said surface of said first semiconductor region on the side of said second semiconductor to said second semiconductor region
• to form said second conductive type lateral RESURF region on a boundary between said first semiconductor region and said second semiconductor region on said terminal part;
• forming another second conductive type lateral RESURF region on a surface of said second semiconductor region on said terminal part opposite to said first semiconductor region;
• repeating said step of forming said first semiconductor region until a predetermined number of layers of said lateral RESURF regions is obtained;
• forming trench grooves at the same depth in the same direction in an element part and a terminal part of said second semiconductor region so at to reach at least said lateral RESURF region of the surface of said terminal part of said first semiconductor region;
• forming a first conductive first pillar region between said trench grooves adjacent to each other;
• and forming a second conductive type second pillar region by embedding a second conductive type semiconductor in said trench groove by epitaxial growth.