Flash memory device and method for manufacturing the same

Abstract

Disclosed are a flash memory device and a method for manufacturing the same. The flash memory device includes a semiconductor substrate having a unit cell defined by an isolation layer, a gate formed over the semiconductor substrate, LDD areas formed at shallow areas of the semiconductor substrate at both sides of the gate, a source and a drain formed at deep areas of the semiconductor substrate while making contact with the LDD areas, and spacers formed at sidewalls of the gate. The spacer includes a first oxide layer pattern, a nitride layer pattern, and a second oxide layer pattern, and the semiconductor substrate includes silicon, so that a silicon-oxide-nitride-oxide-silicon structure for the flash memory device is formed by the silicon of the semiconductor substrate and the spacer at the drain side of the gate.

Dependencies are inferred from the claim text.