Non-volatile memory and method of fabricating the same
AssigneeMacronix International Co., Ltd.
InventorsChi-Pin Lu, Jung-Yu Hsieh, Hsing-Ju Lin
Life of this patent
Estimating the term…
Abstract
A method of fabricating a non-volatile memory is provided. First, a bottom oxide layer is formed on a substrate. Thereafter, a silicon-rich nitride layer is formed on the bottom oxide layer by using NH3 and SiH2Cl2 or SiH4, wherein the thickness of the silicon-rich nitride layer is less than about 40 Å, and the gas flow ratio of NH3 to SiH2Cl2 or SiH4 is about 0.2-0.5. Afterwards, a top oxide layer is formed on the silicon-rich nitride layer. Further, a gate is formed on the top oxide layer. Two doped regions are then formed in the substrate beside the gate.
Claims14
A method of fabricating a non-volatile memory, comprising:
- forming a bottom oxide layer on a substrate;
- forming a silicon-rich nitride layer over the bottom oxide layer by using NH3 and SiH2Cl2 or SiH4;
- forming a top oxide layer on the silicon-rich nitride layer;
- and
- forming a gate on the top oxide layer.
A non-volatile memory, comprising:
- a bottom oxide layer, a silicon-rich nitride layer and a top oxide layer sequentially disposed on a substrate, wherein a thickness of the silicon-rich nitride layer is less than about 40 Å;
- and
- a gate, disposed on the top oxide layer.
Dependencies are inferred from the claim text.