Semiconductor device and manufacturing method for semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHisao Kawasaki
Life of this patent
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Abstract
A semiconductor device including: a SiC substrate; an AlGaN layer formed on the SiC substrate; a source electrode and a drain electrode formed on the AlGaN layer so as to be spaced from each other; an insulation film formed between the source electrode and the drain electrode and having a band-like opening in parallel to the source electrode and the drain electrode; a gate electrode formed at the opening in the insulation film; and a drain-side field plate electrode formed integrally with the gate electrode on the drain electrode side of the gate electrode and having a drain electrode side end portion spaced from the insulation film, thus restraining degradation in performance.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- an operating layer formed on the semiconductor substrate;
- a source electrode and a drain electrode formed on the operating layer so as to be spaced from each other;
- an insulation film formed between the source electrode and the drain electrode and having a band-like opening in parallel to the source electrode and the drain electrode;
- a gate electrode formed at the opening in the insulation film;
- and
- a drain-side field plate electrode formed integrally with the gate electrode on the drain electrode side of the gate electrode and having a drain electrode side end portion spaced from the insulation film.
A manufacturing method for a semiconductor device, comprising the steps of:
- forming an operating layer on a semiconductor substrate;
- forming a source electrode and a drain electrode on the operating layer so as to be spaced from each other;
- forming, between the source electrode and the drain electrode, an insulation film having a band-like first opening in parallel to the electrodes;
- forming a first resist layer on the insulation film, wherein the first resist layer has a second opening above the first opening, and wherein the second opening has a larger opening area than that of the first opening and is of a tapered shape in cross section;
- forming a second resist layer on the first resist layer, wherein the second resist layer has a third opening above the second opening, and wherein the third opening has a larger opening area than that of the second opening and is of an overhang shape in cross section;
- integrally forming a gate electrode, a drain-side field plate electrode and a source-side field plate electrode by vapor-depositing metal from above the second resist layer having the third opening;
- and
- removing the first resist layer and the second resist layer after the metal vapor deposition.
Dependencies are inferred from the claim text.