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US 2010/0059790 A1Published application
Nitride-based semiconductor device and method of manufacturing the same
AssigneeSanyo Electric Co., Ltd.
InventorKunio Takeuchi
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Abstract
A nitride-based semiconductor device includes an n-type nitride-based semiconductor layer, and an n-side electrode having a first metal layer made of Al, formed on a surface of the n-type nitride-based semiconductor layer and a second metal layer made of Hf formed so as to cover a surface of the first metal layer on a side opposite to the n-type nitride-based semiconductor layer.
Claims20
A nitride-based semiconductor device comprising:
- an n-type nitride-based semiconductor layer;
- and
- an n-side electrode including a first metal layer made of Al, formed on a surface of said n-type nitride-based semiconductor layer and a second metal layer made of Hf formed so as to cover a surface of said first metal layer on a side opposite to said n-type nitride-based semiconductor layer.
A method of manufacturing a nitride-based semiconductor device, comprising steps of:
- forming an n-type nitride-based semiconductor layer;
- and
- forming an n-side electrode by stacking a first metal layer made of Al and a second metal layer made of Hf covering a surface of said first metal layer on a side opposite to said n-type nitride-based semiconductor layer on a surface of said n-type nitride-based semiconductor layer.
A method of manufacturing a nitride-based semiconductor device, comprising steps of:
- forming a nitride-based semiconductor stacked with an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer;
- forming a p-side electrode on a surface of said p-type nitride-based semiconductor layer;
- and
- forming an n-side electrode after said step of forming said p-side electrode, wherein
- said step of forming said n-side electrode includes a step of forming said n-side electrode by stacking a first metal layer made of Al and a second metal layer made of Hf covering a surface of said first metal layer on a side opposite to said n-type nitride-based semiconductor layer on a surface of said n-type nitride-based semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.