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AssigneeShowa Denko K.K.
InventorHisayuki Miki
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It is an object of the present invention to provide a gallium nitride-based compound semiconductor light emitting device with high light emission output and low driving voltage. The gallium nitride-based compound semiconductor light emitting device of the present invention is a gallium nitride-based compound semiconductor light emitting device characterized by comprising an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, stacked in that order on a substrate, with a negative electrode and positive electrode provided on the n-type semiconductor layer and p-type semiconductor layer, respectively, the positive electrode being composed of a conductive transparent oxide material, wherein a layer containing a compound with a Ga—O bond and/or an N—O bond is present between the p-type semiconductor layer and positive electrode.
A gallium nitride-based compound semiconductor light emitting device comprising an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, in that order on a substrate, the n-type semiconductor layer and p-type semiconductor layer being provided with an negative electrode and positive electrode, respectively, and the positive electrode being composed of a conductive and transparent oxide material, the light emitting device being characterized in that a layer containing a compound with a Ga—O bond and/or an N—O bond is situated between the p-type semiconductor layer and the positive electrode.
A process for production of a gallium nitride-based compound semiconductor light emitting device wherein a gallium nitride-based compound semiconductor light emitting device is produced by forming an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, in that order on a substrate, and forming an negative electrode and positive electrode composed of a conductive and transparent oxide material, on the formed n-type semiconductor layer and p-type semiconductor layer, respectively, the process being characterized by comprising a step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer, after the step of forming the positive electrode.
A process for production of a gallium nitride-based compound semiconductor light emitting device wherein a gallium nitride-based compound semiconductor light emitting device is produced by forming an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, in that order on a substrate, and forming an negative electrode and positive electrode composed of a conductive and transparent oxide material, on the formed n-type semiconductor layer and p-type semiconductor layer, respectively, the process being characterized by comprising a step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer, after the step of forming the p-type semiconductor layer and before the step of forming the positive electrode.
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