Thin-film transistor display panel and method of fabricating the same

A TFT display panel comprising:

• gate wirings formed on an insulating substrate;
• a gate insulating film which comprises a lower gate insulating film formed on the gate wirings and made of first SiNx and an upper gate insulating film formed on the lower gate insulating film and made of second SiNx;
• oxide active layer patterns re formed on the gate insulating film;
• data wirings formed on the oxide active layer patterns to cross the gate wirings;
• a passivation layer formed on the oxide active layer patterns and the data wirings;
• and
• a pixel electrode formed on the passivation layer,
• wherein the second SiNx contains a smaller amount of hydrogen than the first SiNx.

A method of fabricating a TFT display panel, the method comprising:

• forming gate wirings on an insulating substrate;
• forming oxide active layer patterns on the gate wirings;
• forming data wirings on the oxide active layer patterns to cross the gate wirings;
• forming a passivation layer of SiNx on the oxide active layer patterns and the data wirings;
• and
• forming a pixel electrode on the passivation layer.

A method of fabricating a TFT display panel, the method comprising:

• forming gate wirings on an insulating substrate;
• forming a lower gate insulating film, which is made of first SiNx, on the gate wirings and forming an upper gate insulating film, which is made of second SiNx, on the lower gate insulating film;
• forming oxide active layer patterns on the gate insulating film;
• forming data wirings on the oxide active layer patterns to cross the gate wirings;
• forming a passivation layer on the oxide active layer patterns and the data wirings;
• and
• forming a pixel electrode on the passivation layer,
• wherein the second SiNx contains a smaller amount of hydrogen than the first SiNx.